PART |
Description |
Maker |
RJP4006AGE |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
RJP4301APP09 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
CY20AAJ-8 CY20AAJ-8-T13 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
RJP4002ASA-00-Q0 RJP4002ASA |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
CY20AAH-8F |
Nch IGBT for Strobe Flasher
|
Renesas Electronics Corporation
|
GT8G131 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS)
|
Toshiba Semiconductor
|
SGU20N40L |
Wide Noise Immunity IGBT Suitable for Strobe Flash applications(应用于闸门闪光的抗噪声绝缘栅双极晶体IGBT)) 400 V, N-CHANNEL IGBT, TO-251
|
Fairchild Semiconductor, Corp.
|
GT20G102SM |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
GT25G102SM |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
GT10G131 GT10.131 |
Silicon N Channel IGBT Strobe Flash Applications
|
Toshiba Semiconductor
|
GT20G102SM |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|